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| DDTC (R2-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistor, R2 only B A C BC SOT-323 Dim A B E Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8 Mechanical Data * * * * * * * * Case: SOT-323, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Diagrams & Page 2) Weight: 0.006 grams (approx.) Ordering Information (See Page 2) P/N DDTC114GUA DDTC124GUA DDTC144GUA DDTC115GUA R2 (NOM) 10KW 22KW 47KW 100KW MARKING N26 N27 N28 N29 G H K M C D E G H J K L 0.65 Nominal J D F L C B M a All Dimensions in mm R2 E SCHEMATIC DIAGRAM Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC (Max) Pd RqJA Tj, TSTG Value 50 50 5 100 200 625 -55 to +150 Unit V V V mA mW C/W C Characteristic Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage and Temperature Range Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. DS30324 Rev. 2 - 1 1 of 3 DDTC (R2-ONLY SERIES) UA Electrical Characteristics @ TA = 25C unless otherwise specified Symbol BVCBO BVCEO BVEBO ICBO Min 50 50 5 3/4 300 140 65 30 3/4 30 56 68 82 -30 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 250 Max 3/4 3/4 3/4 0.5 580 260 130 58 0.3 3/4 +30 3/4 Unit V V V mA mA V 3/4 % MHz IC = 50mA IC = 1mA IE = 720mA, DDTC114GUA IE = 330mA, DDTC124GUA IE = 160mA, DDTC144GUA IE = 72mA, DDTC115GUA VCB = 50V VEB = 4V IC = 10mA, IB = 0.5mA IC = 5mA, VCE = 5V 3/4 VCE = 10V, IE = -5mA, f = 100MHz Test Condition NEW PRODUCT Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DDTC114GUA DDTC124GUA DDTC144GUA DDTC115GUA DDTC114GUA DDTC124GUA DDTC144GUA DDTC115GUA IEBO VCE(sat) hFE DR2 fT Collector-Emitter Saturation Voltage DC Current Transfer Ratio Bleeder Resistor (R2) Tolerance Gain-Bandwidth Product* * Transistor - For Reference Only Ordering Information (Note 2) Device DDTC114GUA-7 DDTC124GUA-7 DDTC144GUA-7 DDTC115GUA-7 Notes: Packaging SOT-323 SOT-323 SOT-323 SOT-323 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXX = Product Type Marking Code See Sheet 1 Diagrams YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September XXX Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 2003 P March 3 YM 2004 R Apr 4 2005 S May 5 Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30324 Rev. 2 - 1 2 of 3 DDTC (R2-ONLY SERIES) UA TYPICAL CURVES - DDTC114GUA NEW PRODUCT VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V) 250 1 IC/IB = 10 Pd, POWER DISSIPATION (MILLIWATTS) 200 0.1 75C -25C 25C 150 100 0.01 50 0 -50 0 50 100 150 0.001 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 2 VCE(SAT) vs. IC TA, AMBIENT TEMPERATURE (C) Fig. 1 Derating Curve 1000 5 VCE = 10 hFE, DC CURRENT GAIN (NORMALIZED) IE = 0mA 75C COB, CAPACITANCE (pF) 4 3 100 25C -25C 2 1 0 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 DC CURRENT GAIN 75C 0 100 5 10 15 20 25 30 VR, REVERSE BIAS VOLTAGE (V) Fig. 4 Output Capacitance 10 VO = 0.2 1000 IC, COLLECTOR CURRENT (mA) 100 25C 10 -25C Vin, INPUT VOLTAGE (V) 75C -25C 1 1 25C 0.1 0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (V) Fig. 5 Collector Current Vs. Input Voltage 0.1 0 100 200 300 400 500 600 700 IC, COLLECTOR CURRENT (mA) Fig. 6 Input Voltage vs. Collector Current DS30324 Rev. 2 - 1 3 of 3 DDTC (R2-ONLY SERIES) UA |
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